Title: Intermediate temperature grown GaAs/AlGaAs photodetector with low dark current and high sensitivity
Abstract: A photodetector in which Schottky metal laterally contacts the molecular beam epitaxy grown heterointerface of intermediate-temperature GaAs and Al0.24Ga0.76As is reported. The device processed on 400 °C shows very low dark current, less than 25 fA/μm2 (0.5 pA/μm), with a high dc responsivity of about 10 A/W at low optical power levels. The device is process compatible with high electron mobility transistor technology.