Title: GaAs whiskers grown by a thermal decomposition method
Abstract: Gallium arsenide whiskers have been grown on GaAs substrate by a thermal decomposition method using AsH3 and trimethyl gallium (or triethyl gallium). The whiskers were single crystal hexagonal needles with [111] growth direction and (110) lateral faces. A new morphology was observed near the tip of the whiskers. The whiskers had feeler-like micro whiskers at the tip and had many humps on the side faces near the tip. The results of electron probe micro analysis suggested that there existed a gallium droplet at the tip of the whiskers during the growth. The growth mechanism of the whiskers was concluded to be basically the vapor-liquid-solid mechanism.
Publication Year: 1977
Publication Date: 1977-04-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 24
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot