Title: Experimental evidence for the transition of different indirect tunneling processes in p-HgCdTe
Abstract:We present an experimental observation of the transition of different indirect tunnelling processes in p-type HgCdTe. The results demonstrate that the indirect tunnel currents via Shockley–Read–Hall t...We present an experimental observation of the transition of different indirect tunnelling processes in p-type HgCdTe. The results demonstrate that the indirect tunnel currents via Shockley–Read–Hall traps exhibit a transition from thermally assisted tunneling to two-step indirect tunneling over a temperature range of 25–200 K, which enables independent measurements to be made on the two processes. A 55 meV trap level which contributes strongly to the indirect tunneling mechanisms was estimated by measuring the activation energy.Read More
Publication Year: 1998
Publication Date: 1998-03-16
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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Title: $Experimental evidence for the transition of different indirect tunneling processes in p-HgCdTe
Abstract: We present an experimental observation of the transition of different indirect tunnelling processes in p-type HgCdTe. The results demonstrate that the indirect tunnel currents via Shockley–Read–Hall traps exhibit a transition from thermally assisted tunneling to two-step indirect tunneling over a temperature range of 25–200 K, which enables independent measurements to be made on the two processes. A 55 meV trap level which contributes strongly to the indirect tunneling mechanisms was estimated by measuring the activation energy.