Abstract: High-quality fully strained ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ layers with 0%x22% grown on Si(100) by rapid thermal chemical vapor deposition have been analyzed by photoluminescence spectroscopy. We report a well-resolved near-band-gap excitonic transition observed in SiGe layers. These transitions make it possible to determine directly the fundamental band gap of such strained ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ alloys. The results show that high surface recombination in very thin films prevents the observation of radiative recombination, while demonstrating the striking effectiveness of a Si epitaxial capping layer in eliminating surface recombination.
Publication Year: 1991
Publication Date: 1991-11-15
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 113
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