Title: InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise
Abstract: This paper reports a comprehensive study of impact ionization in InAs avalanche photodiodes (APDs), indicating for the first time that InAs may offer a III-V alternative to the CdHgTe electron APD (EAPD).
Publication Year: 2008
Publication Date: 2008-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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