Title: Electrical Properties of p- and n-GaSe Doped with As and Ge
Abstract: Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.
Publication Year: 2000
Publication Date: 2000-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 11
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