Title: A semi 2D analytical V<inf>th</inf> model for junctionless double gate nanoscale Silicon on Nothing (JLDG-SON) MOSFET
Abstract: In this literature, we have derived and proposed a semi 2D analytical model for junctionless (JL) double gate (DG) SON MOSFET by solving 2D Poisson's equation using variable separation technique. Based on the model derivation, the expressions for central potential, surface potential and threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) are developed consequently in this paper. The figures clearly exhibit how the threshold voltage degradation is affected with the variation of the device parameters such as the silicon thickness (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">si</sub> ), oxide thickness (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> ), drain bias (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> ) and channel length (L). Moreover, the variations of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> roll-off (TVRO), DIBL and subthreshold swing (SS) with the channel length (L) have also come into our consideration.
Publication Year: 2014
Publication Date: 2014-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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