Title: Strain‐Mediated Phase Control and Electrolyte‐Gating of Electron‐Doped Manganites
Abstract: Advanced MaterialsVolume 23, Issue 48 p. 5822-5827 Communication Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites Ping-Hua Xiang, Corresponding Author Ping-Hua Xiang [email protected] National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanNational Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.Search for more papers by this authorShutaro Asanuma, Shutaro Asanuma National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorHiroyuki Yamada, Hiroyuki Yamada National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorIsao H. Inoue, Isao H. Inoue National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorHiroshi Sato, Hiroshi Sato National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorHiroshi Akoh, Hiroshi Akoh National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorAkihito Sawa, Corresponding Author Akihito Sawa [email protected] National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanNational Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.Search for more papers by this authorKazunori Ueno, Kazunori Ueno Department of Basic Science, University of Tokyo, Tokyo 153-8902, Japan, PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorHongtao Yuan, Hongtao Yuan Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, JapanSearch for more papers by this authorHidekazu Shimotani, Hidekazu Shimotani Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, JapanSearch for more papers by this authorMasashi Kawasaki, Masashi Kawasaki Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan CERG, RIKEN, Wako 351-0198, JapanSearch for more papers by this authorYoshihiro Iwasa, Yoshihiro Iwasa Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan CERG, RIKEN, Wako 351-0198, JapanSearch for more papers by this author Ping-Hua Xiang, Corresponding Author Ping-Hua Xiang [email protected] National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanNational Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.Search for more papers by this authorShutaro Asanuma, Shutaro Asanuma National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorHiroyuki Yamada, Hiroyuki Yamada National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorIsao H. Inoue, Isao H. Inoue National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorHiroshi Sato, Hiroshi Sato National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanSearch for more papers by this authorHiroshi Akoh, Hiroshi Akoh National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorAkihito Sawa, Corresponding Author Akihito Sawa [email protected] National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, JapanNational Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.Search for more papers by this authorKazunori Ueno, Kazunori Ueno Department of Basic Science, University of Tokyo, Tokyo 153-8902, Japan, PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, JapanSearch for more papers by this authorHongtao Yuan, Hongtao Yuan Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, JapanSearch for more papers by this authorHidekazu Shimotani, Hidekazu Shimotani Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, JapanSearch for more papers by this authorMasashi Kawasaki, Masashi Kawasaki Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan CERG, RIKEN, Wako 351-0198, JapanSearch for more papers by this authorYoshihiro Iwasa, Yoshihiro Iwasa Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan CERG, RIKEN, Wako 351-0198, JapanSearch for more papers by this author First published: 22 November 2011 https://doi.org/10.1002/adma.201102968Citations: 53Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract A prototype Mott transistor, the electric double layer transistor with a strained CaMnO3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V. Supporting Information Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201102968_sm_suppl.pdf244.6 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1 Y. Tokura, Rep. Prog. 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Publication Year: 2011
Publication Date: 2011-11-22
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 59
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