Publication Information

{'id': 'https://openalex.org/W2014655379', 'doi': 'https://doi.org/10.1063/1.4863332', 'title': 'Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures', 'display_name': 'Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures', 'publication_year': 2014, 'publication_date': '2014-01-28', 'ids': {'openalex': 'https://openalex.org/W2014655379', 'doi': 'https://doi.org/10.1063/1.4863332', 'mag': '2014655379'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.4863332', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S187991544', 'display_name': 'Journal of Applied Physics', 'issn_l': '0021-8979', 'issn': ['0021-8979', '1089-7550', '1520-8850'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5080488750', 'display_name': 'Yuriy Fedoryshyn', 'orcid': 'https://orcid.org/0000-0002-6482-7870'}, 'institutions': [{'id': 'https://openalex.org/I35440088', 'display_name': 'ETH Zurich', 'ror': 'https://ror.org/05a28rw58', 'country_code': 'CH', 'type': 'education', 'lineage': ['https://openalex.org/I2799323385', 'https://openalex.org/I35440088']}], 'countries': ['CH'], 'is_corresponding': False, 'raw_author_name': 'Yuriy Fedoryshyn', 'raw_affiliation_strings': ['Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland'], 'affiliations': [{'raw_affiliation_string': 'Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland', 'institution_ids': ['https://openalex.org/I35440088']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5077543843', 'display_name': 'Olivier Ostinelli', 'orcid': 'https://orcid.org/0000-0002-7828-8310'}, 'institutions': [{'id': 'https://openalex.org/I35440088', 'display_name': 'ETH Zurich', 'ror': 'https://ror.org/05a28rw58', 'country_code': 'CH', 'type': 'education', 'lineage': ['https://openalex.org/I2799323385', 'https://openalex.org/I35440088']}], 'countries': ['CH'], 'is_corresponding': False, 'raw_author_name': 'Olivier Ostinelli', 'raw_affiliation_strings': ['Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland'], 'affiliations': [{'raw_affiliation_string': 'Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland', 'institution_ids': ['https://openalex.org/I35440088']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5052601014', 'display_name': 'Andreas R. Alt', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I35440088', 'display_name': 'ETH Zurich', 'ror': 'https://ror.org/05a28rw58', 'country_code': 'CH', 'type': 'education', 'lineage': ['https://openalex.org/I2799323385', 'https://openalex.org/I35440088']}], 'countries': ['CH'], 'is_corresponding': False, 'raw_author_name': 'Andreas Alt', 'raw_affiliation_strings': ['Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland'], 'affiliations': [{'raw_affiliation_string': 'Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland', 'institution_ids': ['https://openalex.org/I35440088']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5027298633', 'display_name': 'Angel Pallin', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I35440088', 'display_name': 'ETH Zurich', 'ror': 'https://ror.org/05a28rw58', 'country_code': 'CH', 'type': 'education', 'lineage': ['https://openalex.org/I2799323385', 'https://openalex.org/I35440088']}], 'countries': ['CH'], 'is_corresponding': False, 'raw_author_name': 'Angel Pallin', 'raw_affiliation_strings': ['Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland'], 'affiliations': [{'raw_affiliation_string': 'Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland', 'institution_ids': ['https://openalex.org/I35440088']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5008672841', 'display_name': 'C. R. Bolognesi', 'orcid': 'https://orcid.org/0000-0002-5651-4532'}, 'institutions': [{'id': 'https://openalex.org/I35440088', 'display_name': 'ETH Zurich', 'ror': 'https://ror.org/05a28rw58', 'country_code': 'CH', 'type': 'education', 'lineage': ['https://openalex.org/I2799323385', 'https://openalex.org/I35440088']}], 'countries': ['CH'], 'is_corresponding': False, 'raw_author_name': 'Colombo R. Bolognesi', 'raw_affiliation_strings': ['Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland'], 'affiliations': [{'raw_affiliation_string': 'Millimeter-Wave-Electronics Group , ETH Zurich, 8092 Zurich, Switzerland', 'institution_ids': ['https://openalex.org/I35440088']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': {'value': 3500, 'currency': 'USD', 'value_usd': 3500, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 0.313, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 2, 'citation_normalized_percentile': {'value': 0.5348, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 73, 'max': 76}, 'biblio': {'volume': '115', 'issue': '4', 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10022', 'display_name': 'Semiconductor Quantum Structures and Devices', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12588', 'display_name': 'Electronic and Structural Properties of Oxides', 'score': 0.9993, 'subfield': {'id': 'https://openalex.org/subfields/2505', 'display_name': 'Materials Chemistry'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/electron-mobility', 'display_name': 'Electron Mobility', 'score': 0.8620091}], 'concepts': [{'id': 'https://openalex.org/C106782819', 'wikidata': 'https://www.wikidata.org/wiki/Q6501076', 'display_name': 'Electron mobility', 'level': 2, 'score': 0.8620091}, {'id': 'https://openalex.org/C132882038', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'Induced high electron mobility transistor', 'level': 5, 'score': 0.8553208}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.692999}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.662715}, {'id': 'https://openalex.org/C147120987', 'wikidata': 'https://www.wikidata.org/wiki/Q2225', 'display_name': 'Electron', 'level': 2, 'score': 0.5903166}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.58924115}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.5545793}, {'id': 'https://openalex.org/C162057924', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'High-electron-mobility transistor', 'level': 4, 'score': 0.31521207}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.22648463}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.13650224}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.06339571}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.4863332', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S187991544', 'display_name': 'Journal of Applied Physics', 'issn_l': '0021-8979', 'issn': ['0021-8979', '1089-7550', '1520-8850'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7', 'score': 0.73}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 14, 'referenced_works': ['https://openalex.org/W1580151661', 'https://openalex.org/W1976846537', 'https://openalex.org/W2021955711', 'https://openalex.org/W2024712676', 'https://openalex.org/W2043365391', 'https://openalex.org/W2063800411', 'https://openalex.org/W2072199920', 'https://openalex.org/W2072549921', 'https://openalex.org/W2076935928', 'https://openalex.org/W2079473095', 'https://openalex.org/W2084006371', 'https://openalex.org/W2091131476', 'https://openalex.org/W2170534490', 'https://openalex.org/W3106349567'], 'related_works': ['https://openalex.org/W2893463654', 'https://openalex.org/W2788944856', 'https://openalex.org/W2495209789', 'https://openalex.org/W2471795202', 'https://openalex.org/W2093324122', 'https://openalex.org/W2077488645', 'https://openalex.org/W2028931051', 'https://openalex.org/W2019234249', 'https://openalex.org/W1862973845', 'https://openalex.org/W1643924019'], 'abstract_inverted_index': {'The': [0, 15, 77], 'optimization': [1], 'of': [2, 31, 38], 'heavily': [3], 'strained': [4, 75], 'Ga0.25In0.75As/Al0.48In0.52As': [5], 'high': [6, 56], 'electron': [7, 34, 53], 'mobility': [8, 30], 'transistor': [9], 'structures': [10], 'is': [11], 'discussed': [12], 'in': [13, 25], 'detail.': [14], 'growth': [16], 'parameters': [17], 'and': [18, 45, 61, 67], 'the': [19, 29, 32, 89], 'channel': [20, 43], 'layer': [21, 44, 51], 'interfaces': [22], 'were': [23], 'optimized': [24], 'order': [26], 'to': [27], 'maximize': [28], 'two-dimensional': [33], 'gas.': [35], 'Structures': [36], 'composed': [37], 'an': [39], '11': [40], 'nm': [41, 48], 'thick': [42, 49], 'a': [46], '4': [47], 'spacer': [50], 'exhibited': [52], 'mobilities': [54], 'as': [55, 57], '15': [58], '100': [59], 'cm2/Vs': [60, 64], '70': [62], '000': [63], 'at': [65], '300': [66], '77': [68], 'K,': [69], 'respectively,': [70], 'for': [71], 'channels': [72], 'including': [73], 'InAs': [74], 'layers.': [76], 'sheet': [78], 'carrier': [79], 'density': [80], 'was': [81], 'kept': [82], 'above': [83], '2.5': [84], '×': [85], '1012': [86], 'cm−2': [87], 'throughout': [88], 'entire': [90], 'study.': [91]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2014655379', 'counts_by_year': [{'year': 2016, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 1}], 'updated_date': '2024-12-14T05:28:13.914301', 'created_date': '2016-06-24'}