P‐17: Development of Amorphous Oxide Thin Film Transistors Fabricated by a Total Solution Process for Display Application

Name: P‐17: Development of Amorphous Oxide Thin Film Transistors Fabricated by a Total Solution Process for Display Application
Uploaded: 2014-06-01
Description: Abstract First, we introduce a new oxide channel material, zirconium‐indium‐zinc‐oxide (ZIZO), with high performance and high stability. Second, we develop a totally solution‐derived process for fabricating active‐matrix TFTs for display application. The obtained TFT performance is better than a‐Si TFT and comparable to that of vacuum‐processed oxide TFTs.
Phan Trong Tue; Hiroaki Kōyama; Jinwang Li; Satoshi Inoue; Tatsuya Shimoda
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