Title: Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
Abstract:The direct observation of electric-field-induced optical anisotropy in InGaAs-InP quantum wells is reported. The analysis of this effect shows that hitherto neglected heavy- and light-hole couplings a...The direct observation of electric-field-induced optical anisotropy in InGaAs-InP quantum wells is reported. The analysis of this effect shows that hitherto neglected heavy- and light-hole couplings at the minizone center due to interface and external potential inversion asymmetries play a much stronger role than the classical bulk inversion asymmetry. The giant electropleochroism previously reported by Kwok et al. is quantitatively explained.Read More
Publication Year: 1998
Publication Date: 1998-06-29
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 78
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