Title: Low threshold, high gain AlGaInAs quantum dot lasers
Abstract: The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (∼920nm). It is found that Al0.15Ga0.23In0.62As QD lasers show an ∼2.1 times higher material gain and lower threshold current densities than Ga0.57In0.43As lasers (a factor of ∼1.4 for 1.0mm long and 100μm wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174K between 15 and 85°C.