Title: Extended-defect reduction by uniform heating for P+-implanted Si wafers
Abstract: P was implanted into 76-mm-diam (111) Si wafers at an energy of 40 keV with a dose of 2.54×1016/cm2. An increase in extended defects was found at a high insertion speed of wafer loading into a furnace at 1000–1100 °C in a N2 ambient. The increase was due to nonuniformity in the temperature history and resultant thermal stress in the wafer, though no slip line was observed. The temperature nonuniformity was monitored by thermal-oxide thickness nonuniformity for heating in a dry-O2 ambient. A low insertion speed resulted in uniform heating and reduced extended defects.
Publication Year: 1983
Publication Date: 1983-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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