Use of selective annealing for growing very large grain silicon on insulator films

Name: Use of selective annealing for growing very large grain silicon on insulator films
Uploaded: 1982-08-15
Description: The selective annealing technique (laser annealing under a patterned antireflecting coating) has been successfully applied to the growth of very large (20×400 μm) silicon single crystals on SiO2. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.
Jean-Pierre Colinge; E. Demoulin; D. Bensahel; G. Auvert
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