Title: Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions
Abstract: Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and good electrical performance, including field-effect mobility of 5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s, a threshold voltage of 5.6 V, a subthreshold swing of 0.5 V/dec, and an on/off current ratio of 6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> . With scaling down of the channel length, good characteristics are also obtained with a small shift in the threshold voltage and no degradation in the subthreshold swing.
Publication Year: 2012
Publication Date: 2012-07-03
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 43
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