Title: High quantum efficiency photoemission from GaAs1−<i>x</i>P<i>x</i> alloys
Abstract: Photoemission from GaAs1−xPx alloys activated to negative electron affinity has been studied over the band-gap range 1.4&lt;Eg (eV) &lt;2.1 (0&lt;x&lt;0.55). Quantum yields up to 50% (electrons/incident photon) have been measured in the visible.
Publication Year: 1977
Publication Date: 1977-04-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 15
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