Title: Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Abstract: Amorphous silicon quantum dots (a-Si QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that a-Si QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of a-Si QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the a-Si QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the a-Si QD, a (nm) by E(eV) = 1.56+2.40/a(2), which is a clear evidence for the quantum confinement effect in a-Si QDs.
Publication Year: 2001
Publication Date: 2001-02-12
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 499
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