Title: Improvement of crystal quality in ammonothermal growth of bulk GaN
Abstract: Several key improvements in crystal quality of bulk GaN grown by the ammonothermal method are presented. Full width at half maximum of (0 0 2) X-ray rocking curve was reduced to 53 and 62 arcsec for Ga-side and N-side, respectively. Transparent bulk GaN crystal was also demonstrated. Oxygen and sodium concentrations were reduced to mid-1018 and mid-1015 cm−3, respectively. We are currently searching for a growth condition that produces transparent bulk GaN with high structural quality and low impurities. Small-sized, semi-transparent GaN wafers were fabricated by slicing the grown bulk GaN crystals, which demonstrate the high feasibility of ammonothermal growth for production of GaN wafers.
Publication Year: 2010
Publication Date: 2010-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 25
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