Title: DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
Abstract: The circuit to apply dynamic operation stress (DOS) to dynamic random access memory (DRAM) cell in wafer burn-in (WBI) mode is successfully implemented. We have verified that the degradation of data retention time occurred during burn-in (BI) test is mainly attributed to DOS-induced hot carrier (HC) degradation of DRAM cell. The characterization result of DRAM reliability by DOS-applying method in WBI mode is a good agreement with that by real operation stress in package burn-In (PBI) mode.
Publication Year: 2003
Publication Date: 2003-04-30
Language: en
Type: article
Indexed In: ['crossref']
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