Title: Study of Dislocation Densities of Thick GaN Films
Abstract: The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.
Publication Year: 2014
Publication Date: 2014-07-01
Language: en
Type: article
Indexed In: ['crossref']
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