Publication Information

{'id': 'https://openalex.org/W2000164064', 'doi': 'https://doi.org/10.1063/1.338259', 'title': 'High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films', 'display_name': 'High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films', 'publication_year': 1987, 'publication_date': '1987-01-15', 'ids': {'openalex': 'https://openalex.org/W2000164064', 'doi': 'https://doi.org/10.1063/1.338259', 'mag': '2000164064'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.338259', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S187991544', 'display_name': 'Journal of Applied Physics', 'issn_l': '0021-8979', 'issn': ['0021-8979', '1089-7550', '1520-8850'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5017715939', 'display_name': 'Yoshimi Shioya', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2252096349', 'display_name': 'Fujitsu (Japan)', 'ror': 'https://ror.org/038e2g226', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I2252096349']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Yoshimi Shioya', 'raw_affiliation_strings': ['Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan'], 'affiliations': [{'raw_affiliation_string': 'Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan', 'institution_ids': ['https://openalex.org/I2252096349']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5013243277', 'display_name': 'Kaoru Ikegami', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2252096349', 'display_name': 'Fujitsu (Japan)', 'ror': 'https://ror.org/038e2g226', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I2252096349']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Kaoru Ikegami', 'raw_affiliation_strings': ['Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan'], 'affiliations': [{'raw_affiliation_string': 'Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan', 'institution_ids': ['https://openalex.org/I2252096349']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5086213138', 'display_name': 'Mamoru Maeda', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2252096349', 'display_name': 'Fujitsu (Japan)', 'ror': 'https://ror.org/038e2g226', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I2252096349']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Mamoru Maeda', 'raw_affiliation_strings': ['Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan'], 'affiliations': [{'raw_affiliation_string': 'Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan', 'institution_ids': ['https://openalex.org/I2252096349']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5076386296', 'display_name': 'Kimio Yanagida', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2252096349', 'display_name': 'Fujitsu (Japan)', 'ror': 'https://ror.org/038e2g226', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I2252096349']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Kimio Yanagida', 'raw_affiliation_strings': ['Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan'], 'affiliations': [{'raw_affiliation_string': 'Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan', 'institution_ids': ['https://openalex.org/I2252096349']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': {'value': 3500, 'currency': 'USD', 'value_usd': 3500, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 0.837, 'has_fulltext': False, 'cited_by_count': 26, 'citation_normalized_percentile': {'value': 0.767552, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 88, 'max': 89}, 'biblio': {'volume': '61', 'issue': '2', 'first_page': '561', 'last_page': '566'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11853', 'display_name': 'Semiconductor materials and interfaces', 'score': 0.9987, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11853', 'display_name': 'Semiconductor materials and interfaces', 'score': 0.9987, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11100', 'display_name': 'Intermetallics and Advanced Alloy Properties', 'score': 0.9985, 'subfield': {'id': 'https://openalex.org/subfields/2210', 'display_name': 'Mechanical Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12371', 'display_name': 'Electrical Contact Performance and Analysis', 'score': 0.9914, 'subfield': {'id': 'https://openalex.org/subfields/2210', 'display_name': 'Mechanical Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [], 'concepts': [{'id': 'https://openalex.org/C542268612', 'wikidata': 'https://www.wikidata.org/wiki/Q743', 'display_name': 'Tungsten', 'level': 2, 'score': 0.9403303}, {'id': 'https://openalex.org/C2780901251', 'wikidata': 'https://www.wikidata.org/wiki/Q426473', 'display_name': 'Silicide', 'level': 3, 'score': 0.91490275}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.78200865}, {'id': 'https://openalex.org/C203036418', 'wikidata': 'https://www.wikidata.org/wiki/Q284256', 'display_name': 'Crystallization', 'level': 2, 'score': 0.6345906}, {'id': 'https://openalex.org/C21036866', 'wikidata': 'https://www.wikidata.org/wiki/Q181767', 'display_name': 'Stress (linguistics)', 'level': 2, 'score': 0.61460185}, {'id': 'https://openalex.org/C2777289219', 'wikidata': 'https://www.wikidata.org/wiki/Q7632154', 'display_name': 'Substrate (aquarium)', 'level': 2, 'score': 0.58790517}, {'id': 'https://openalex.org/C57410435', 'wikidata': 'https://www.wikidata.org/wiki/Q505668', 'display_name': 'Chemical vapor deposition', 'level': 2, 'score': 0.5839904}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.53692806}, {'id': 'https://openalex.org/C19067145', 'wikidata': 'https://www.wikidata.org/wiki/Q1137203', 'display_name': 'Thin film', 'level': 2, 'score': 0.44126078}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.3632835}, {'id': 'https://openalex.org/C42360764', 'wikidata': 'https://www.wikidata.org/wiki/Q83588', 'display_name': 'Chemical engineering', 'level': 1, 'score': 0.16475663}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.109677225}, {'id': 'https://openalex.org/C41895202', 'wikidata': 'https://www.wikidata.org/wiki/Q8162', 'display_name': 'Linguistics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C138885662', 'wikidata': 'https://www.wikidata.org/wiki/Q5891', 'display_name': 'Philosophy', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C111368507', 'wikidata': 'https://www.wikidata.org/wiki/Q43518', 'display_name': 'Oceanography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C127313418', 'wikidata': 'https://www.wikidata.org/wiki/Q1069', 'display_name': 'Geology', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.338259', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S187991544', 'display_name': 'Journal of Applied Physics', 'issn_l': '0021-8979', 'issn': ['0021-8979', '1089-7550', '1520-8850'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 9, 'referenced_works': ['https://openalex.org/W1965777387', 'https://openalex.org/W2008112114', 'https://openalex.org/W2010282281', 'https://openalex.org/W2017025327', 'https://openalex.org/W2051021955', 'https://openalex.org/W2068712618', 'https://openalex.org/W2071237865', 'https://openalex.org/W2084469462', 'https://openalex.org/W2086339612'], 'related_works': ['https://openalex.org/W4281698929', 'https://openalex.org/W2914401657', 'https://openalex.org/W2751847288', 'https://openalex.org/W2385571654', 'https://openalex.org/W2361648762', 'https://openalex.org/W2047072275', 'https://openalex.org/W203087916', 'https://openalex.org/W2000164064', 'https://openalex.org/W1975066220', 'https://openalex.org/W1537382068'], 'abstract_inverted_index': {'Stresses': [0], 'in': [1, 34, 41, 133, 144], 'chemical-vapor-deposited': [2], 'tungsten': [3, 6, 35, 145, 157], 'silicide': [4, 14, 36, 158], 'and': [5, 20, 30, 40, 115], 'films': [7, 15, 25, 37, 146], 'at': [8, 66, 151], 'high': [9], 'temperatures': [10], 'were': [11, 16, 26], 'measured.': [12], 'Tungsten': [13, 24], 'formed': [17, 27], 'from': [18, 28], 'WF6': [19, 29], 'SiH4': [21], 'or': [22], 'Si2H6.': [23], 'H2.': [31], 'The': [32, 83, 95, 142], 'stress': [33, 54, 79, 87, 96, 131, 143], 'is': [38, 88, 102, 120, 166], 'tensile': [39], 'the': [42, 53, 71, 78, 86, 93, 105, 108, 113, 116, 123, 130, 134, 137, 140, 156, 161], 'order': [43], 'of': [44, 51, 55, 58, 85, 92, 107, 136, 163], '109–1010': [45], 'dynes/cm2.': [46], 'For': [47], 'a': [48, 56, 64, 75, 149], 'composition': [49, 76], 'ratio': [50], 'Si/W≤2.6,': [52], 'film': [57, 114, 124, 138], 'more': [59], 'than': [60], '1000': [61], 'Å': [62], 'has': [63, 80, 97], 'maximum': [65, 84, 150], 'about': [67], '500': [68], '°C.': [69], 'On': [70], 'other': [72], 'hand,': [73], 'for': [74], 'Si/W>2.9,': [77], 'no': [81], 'maximum.': [82], 'caused': [89], 'by': [90], 'crystallization': [91], 'film.': [94], 'two': [98], 'components.': [99], 'One': [100], 'component': [101], 'related': [103, 121], 'to': [104, 122, 155], 'difference': [106], 'thermal': [109], 'expansion': [110], 'coefficients': [111], 'between': [112], 'Si': [117], 'substrate.': [118, 141], 'Another': [119], 'crystallization.': [125], 'It': [126], 'was': [127], 'found': [128], 'that': [129], 'concentrates': [132], 'portion': [135], 'nearest': [139], 'also': [147], 'reaches': [148], '550': [152], '°C,': [153], 'similar': [154], 'films.': [159], 'However,': [160], 'cause': [162], 'this': [164], 'behavior': [165], 'not': [167], 'clear.': [168]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2000164064', 'counts_by_year': [{'year': 2020, 'cited_by_count': 1}, {'year': 2019, 'cited_by_count': 1}, {'year': 2013, 'cited_by_count': 1}], 'updated_date': '2024-12-13T10:32:23.234379', 'created_date': '2016-06-24'}