Title: Double gate junctionless MOSFET simulation and comparison with analytical model
Abstract: This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) to 5×10 (cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sub> -v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</sub> characteristics and analyzes the parameters of the inverter (e.g. V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Oh</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ol</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ih</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">il</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> ), and the noise margin (e.g. NM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> , NM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</sub> ) will be calculated in order to determine the inverter's performance and quality.
Publication Year: 2013
Publication Date: 2013-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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