Title: Peculiarities of vacancy-related defects formation in Si doped with tin
Abstract: Transformations of vacancy-related defects during isochronal annealing of electron-irradiated Si:Sn crystals were investigated by means of infrared absorption spectroscopy. A band at 4100 cm−1 (the position at 300 K) appeared in absorption spectra of the irradiated Si:Sn samples simultaneously with the disappearance of absorption lines due to divacancies (V2). In the low-temperature absorption spectra this band exhibited splitting into series of narrow equidistant lines. Another similar series of equidistant absorption lines was observed at lower frequencies, 2750–2900 cm−1. These two series of lines were assigned to Sn2V2 center in different charge states. Sn atoms were found to be effective sinks for mobile vacancy–oxygen (VO) centers. An absorption band at 807 cm−1 was assigned to SnVO complex.
Publication Year: 2003
Publication Date: 2003-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 8
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