Title: Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
Abstract: We present a model of global heat transfer in Czochralski (CZ) systems for growth of silicon crystals, allowing a self-consistent calculation of radiative and conductive heat exchange, turbulent melt convection, and inert gas flow. The model is verified by comparing the calculated heater power and temperature difference in the melt to available experimental observations. The simulations are used to reveal the gas flow effect on the heat transport, melt convection, and melt/crystal interface geometry in an industrial CZ system. From the analysis of the results obtained, we derive recommendations concerning when the argon gas flow should be necessarily included in the heat transfer calculation.
Publication Year: 2003
Publication Date: 2003-02-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 129
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot