Title: Si X-ray absorption near edge structure (XANES) of Si, SiC, SiO2, and Si3N4 measured by an electron probe X-ray microanalyzer (EPMA)
Abstract: Silicon K X-ray emission spectra of Si, SiC, Si3N4, and SiO2 are measured using a wavelength dispersive electron probe X-ray microanalyzer. It is shown that the fine structures in the line shape of the low energy tail of the Kα characteristic X-ray emission spectra resemble those of the K X-ray absorption near edge structure (XANES). XANES spectra of 1 μm2 area can be obtained by this method.
Publication Year: 1999
Publication Date: 1999-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 12
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