Title: InGaAsP heterostructure avalanche photodiodes with high avalanche gain
Abstract: Distinct improvements in avalanche-gain and dark-current characteristics have been made in InGaAsP heterostructure APD’s. A planar-type p-n junction is formed in an InP window layer, separated from a light-absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark-current density as low a 1 μA/cm2 at 0.5 Vb.
Publication Year: 1979
Publication Date: 1979-08-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 187
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