Title: Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Abstract:A comparison between compositionally stepped and alternating step-graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The...A comparison between compositionally stepped and alternating step-graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step-graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the ‘‘zero-net-strain’’ precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. González, Y. González, A. Sacedón, and F. González-Sanz, Appl. Phys. Lett. 65, 845 (1994)].Read More
Publication Year: 1995
Publication Date: 1995-12-11
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 19
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