Title: Electric-Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes
Abstract: Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding $25\text{ }\text{ }\ensuremath{\mu}\mathrm{A}$, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of $2\ifmmode\times\else\texttimes\fi{}{10}^{7}\text{ }\text{ }\mathrm{cm}/\mathrm{s}$.
Publication Year: 2005
Publication Date: 2005-11-30
Language: en
Type: article
Indexed In: ['crossref', 'datacite', 'pubmed']
Access and Citation
Cited By Count: 91
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