Title: X–ray absorption fine structure (XAFS) of Si wafer measured using total reflection X–rays
Abstract: Extended X–ray absorption fine structure (EXAFS) and X–ray absorption near edge structure (XANES) spectra of a Si wafer are measured using grazing incidence X–rays. The spectra are measured using the total electron yield method. Fourier transform of the measured EXAFS oscillation is compared among different glancing angles. It is concluded that the XANES spectra are more sensitive to the surface Si–O bond than the EXAFS spectra. The source of probing depth difference of XAFS spectroscopy estimated by different researchers are discussed.
Publication Year: 1999
Publication Date: 1999-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 9
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