Title: <title>The studies of RT electrical resistivities of LaNiO<formula><inf><roman>3-δ</roman></inf></formula>thin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures</title>
Abstract: Electrically conductive LaNiO<sub>3-δ</sub>thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La<sub>2</sub>NiO<sub>4</sub> and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.
Publication Year: 2004
Publication Date: 2004-12-08
Language: en
Type: article
Indexed In: ['crossref']
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