Title: Magnetron-Enhanced Etching Of Photoresist For Sub-Micron Patterning
Abstract:Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposur...Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposure and devolopment of photoresist on reflective and severe topographies. Two processes developed to meet these challenges are Multi-Level Resist processing and the Dry Development of Photoresist. Critical to both of these processes is the need for a productive, >4000A/min, anisotropic etch of photoresist with critical dimension loss of <0.05um.Read More
Publication Year: 1990
Publication Date: 1990-01-30
Language: en
Type: article
Indexed In: ['crossref']
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