Title: Study of interface stresses in heterostructures using infrared piezobirefringence
Abstract: A general algorithm for the simulation of stress field images in III–V heterostructures, using infrared piezobirefringence, is presented in this article. As a first step, the algorithm is applied for the simulation of stress fields associated with step deposited SiO2 on GaAs substrates, under two assumptions—one that of distributed loading along the film, and the other that of concentrated loading at the two edges of the film. The simulated images are presented, and these are seen to be functions of film and sample thicknesses, and polarization angle of the incident light. Next, the algorithm was applied for III–V heterostructures (with and without misfit dislocations), and the simulated images are presented. These images are functions of substrate thickness, film thickness, dislocation density at the interface, and polarization angle of the incident light. In principle, any arbitrary heterostructure can be placed under a dark field polariscope, and the experimental images of the interface obtained for varying polarization angles of the incident light. Then an image matching procedure between the experimentally observed images and the simulated ones can yield the information about the defects present at the interface. This technique offers a superior speed advantage over other conventional methods, and permits testing of each individual sample without going in for statistical estimates. This can tremendously boost the yield. Some experimental results and their match with the theoretical ones are also presented.
Publication Year: 1996
Publication Date: 1996-12-15
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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