Title: Electrical and Reliability Characteristics of High-$\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors
Abstract: In this letter, we investigated the electrical and reliability characteristics of high- κ HoTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> , a small subthreshold swing of 160 mV/decade, and a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> current ratio of 1.3 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> . These results are attributed to the incorporation of TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> into the Ho <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> α-IGZO TFT was studied under both positive and negative bias stress conditions.
Publication Year: 2014
Publication Date: 2014-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 33
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