Title: Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices
Abstract: The systematic study of the oxygen partial pressure (OPP) and total chamber gas pressure (TGP) effects on the stoichiometry and crystal structure of rf sputtered Ba0.45Sr0.55TiO3 (BST) films and their phase purity allowed identifying close to optimal sputtering parameters for BST single phase polycrystalline film. The film with a Ba/Sr ratio equal to that of the source target and (Ba + Sr)/Ti ratio close to unity demonstrated the enhanced permittivity value of 553 and tunability of 69%. It was confirmed that the increase of TGP enables better match of the film and target stoichiometry. However, using O2/Ar ratio as a parameter should be utilized cautiously since exceeding a threshold OPP (2 mTorr in our case) may facilitate secondary phase formation. Relatively large dielectric losses were observed in both films sputtered at high (30 mTorr) and low (5 mTor) TGPs. The presence of oxygen vacancies was identified as a probable cause of losses, which is indirectly confirmed by the deviation of the film lattice constant from that of the bulk target.