Title: A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices
Abstract: The importance of understanding asymmetrical behaviour in SRAM has increased as the technology node shrinks below 100 nm. Single bit failure can possibly be caused by the malfunction of any of the six transistors in a standard SRAM cell. In order to understand the asymmetrical behaviour in advanced nano SRAM devices, nanoprobing is introduced to perform transistor level fault isolation prior to attempting physical failure analysis (PFA)
Publication Year: 2006
Publication Date: 2006-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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