Title: A Doping‐Free Carbon Nanotube CMOS Inverter‐Based Bipolar Diode and Ambipolar Transistor
Abstract: Advanced MaterialsVolume 20, Issue 17 p. 3258-3262 Communication A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor† Sheng Wang, Sheng Wang Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorZhiyong Zhang, Zhiyong Zhang Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorLi Ding, Li Ding Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorXuelei Liang, Corresponding Author Xuelei Liang [email protected] Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China).Search for more papers by this authorJun Shen, Jun Shen Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorHuilong Xu, Huilong Xu Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorQing Chen, Qing Chen Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorRongLi Cui, RongLi Cui Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) College of Chemistry and Molecular Engineering, Peking University Beijing 100871 (P. R. China)Search for more papers by this authorYan Li, Yan Li Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) College of Chemistry and Molecular Engineering, Peking University Beijing 100871 (P. R. China)Search for more papers by this authorLian-Mao Peng, Corresponding Author Lian-Mao Peng [email protected] Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China).Search for more papers by this author Sheng Wang, Sheng Wang Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorZhiyong Zhang, Zhiyong Zhang Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorLi Ding, Li Ding Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorXuelei Liang, Corresponding Author Xuelei Liang [email protected] Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China).Search for more papers by this authorJun Shen, Jun Shen Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorHuilong Xu, Huilong Xu Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorQing Chen, Qing Chen Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Search for more papers by this authorRongLi Cui, RongLi Cui Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) College of Chemistry and Molecular Engineering, Peking University Beijing 100871 (P. R. China)Search for more papers by this authorYan Li, Yan Li Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) College of Chemistry and Molecular Engineering, Peking University Beijing 100871 (P. R. China)Search for more papers by this authorLian-Mao Peng, Corresponding Author Lian-Mao Peng [email protected] Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China) Department of Electronics, Peking University, Beijing 100871 (P. R. China)Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871 (P. R. China).Search for more papers by this author First published: 01 September 2008 https://doi.org/10.1002/adma.200703210Citations: 63 † This work was supported by the Ministry of Science and Technology (Grant No. 2006CB932400), and National Science Foundation of China (Grant Nos. 10434010, 90606026 and 60571002). Supporting Information is available online from Wiley InterScience or from the authors. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract A barrier-free bipolar diode (BFBD) and an ambipolar field-effect transistor (FET) are fabricated based on a doping-free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side-by-side on a single CNT, and can be used as an n-FET, p-FET, CMOS inverter, and high-performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current. References 1 S. Iijima, Nature 1991, 354, 56. 2 P. Avouris, Z. H. Chen, V. Perebeinos, Nat. Nanotechnol. 2007, 2, 605. 3 J. C. Charlier, X. Blase, S. Roche, Rev. Mod. Phys. 2007, 79, 677. 4 S. J. Tan, A. R. M. Verschueren, C. Dekker, Nature 1998, 393, 49. 5 R. Martel, T. Schmidt, H. R. Shea, T. Hertel, P. Avouris, Appl. Phys. Lett. 1998, 73, 2447. 6 A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. McEuen, M. Lundstrom, H. J. Dai, Nat. Mater. 2002, 1, 241. 7 A. Javey, J. Guo, Q. Wang, M. Lundstrom, H. J. Dai, Nature 2003, 424, 654. 8 X. Zhou, J. Y. Park, S. Huang, J. Liu, P. L. McEuen, Phys. Rev. Lett. 2005, 95, 146805. 9 C. W. Zhou, J. Kong, E. Yenilmez, H. J. Dai, Science 2000, 290, 1552. 10 J. U. Lee, P. P. Gipp, C. M. Heller, Appl. Phys. Lett. 2004, 85, 145. 11 Z. Yao, H. W. C. Postma, L. Balents, C. Dekker, Nature 1999, 402, 273. 12 M. H. Yang, B. K. Teo, W. I. Milne, D. G. Hasko, Appl. Phys. Lett. 2005, 87, 253116. 13 C. G. Lu, L. An, Q. Fu, J. Liu, H. Zhang, J. Murduck, Appl. Phys. Lett. 2006, 88, 133501. 14 H. M. Manohara, E. W. Wong, E. Schlecht, B. D. Hunt, P. H. Siegel, Nano Lett. 2005, 5, 1469. 15 Z. Y. Zhang, X. L. liang, S. Wang, K. Yao, Y. F. Hu, Y. Z. Zhu, Q. Chen, W. W. Zhou, Y. Li, Y. G. Yao, J. Zhang, L.-M. Peng, Nano Lett. 2007, 7, 3603. 16 S. Sze, Physics of Semiconductor Devices, Wiley, New York 1981. 17 J. A. Misewich, R. Martel, P. Avouris, S. Heinze, J. Tersoff, Science 2003, 300, 783. 18 S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, P. Avouris, Phys. Rev. Lett. 2002, 89, 106801. 19 W. W. Zhou, Z. Y. Han, J. Y. Wang, Y. Zhang, Z. Jin, X. Sun, Y. W. Zhang, C. H. Yan, Y. Li, Nano Lett. 2006, 6, 2987. Citing Literature Supporting Information Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200703210_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume20, Issue17September 3, 2008Pages 3258-3262 ReferencesRelatedInformation
Publication Year: 2008
Publication Date: 2008-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 70
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