Title: Breakdown in silicon oxides—correlation with Cu precipitates
Abstract: Thin oxides grown on silicon substrate in which Cu+ ions had been implanted before oxidation were studied by transmission electron microscope (TEM) and scanning TEM imaging methods. Cu precipitates, stacking faults, and dislocations appeared at the SiO2/Si interface on the degraded specimens. The Cu precipitates reduce the breakdown strength by local thinning of the oxide thickness. Stacking faults and dislocations, however, do not reduce the breakdown strength.
Publication Year: 1984
Publication Date: 1984-08-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 105
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