Title: Hole Mobility in Cr-Doped p-Type ?-FeSi2 Single Crystals
Abstract: physica status solidi (b)Volume 210, Issue 1 p. 187-194 Original Paper Hole Mobility in Cr-Doped p-Type β-FeSi2 Single Crystals E. Arushanov, E. Arushanov [email protected] and [email protected] Institute of Applied Physics, Academy of Sciences of Moldova, Kishinev, MoldovaSearch for more papers by this authorY. Tomm, Y. Tomm Hahn-Meitner-Institute, Department Solar Energetics, D-14109 Berlin, GermanySearch for more papers by this authorL. Ivanenko, L. Ivanenko Belarusian State University of Informatics and Radioelectronics, Minsk, BelarusSearch for more papers by this authorH. Lange, H. Lange Hahn-Meitner-Institute, Department Photovoltaics, D-12480 Berlin, GermanySearch for more papers by this author E. Arushanov, E. Arushanov [email protected] and [email protected] Institute of Applied Physics, Academy of Sciences of Moldova, Kishinev, MoldovaSearch for more papers by this authorY. Tomm, Y. Tomm Hahn-Meitner-Institute, Department Solar Energetics, D-14109 Berlin, GermanySearch for more papers by this authorL. Ivanenko, L. Ivanenko Belarusian State University of Informatics and Radioelectronics, Minsk, BelarusSearch for more papers by this authorH. Lange, H. Lange Hahn-Meitner-Institute, Department Photovoltaics, D-12480 Berlin, GermanySearch for more papers by this author First published: 29 January 1999 https://doi.org/10.1002/(SICI)1521-3951(199811)210:1<187::AID-PSSB187>3.0.CO;2-FCitations: 12AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract The analysis of mobility in Cr-doped p-type β-FeSi2 single crystals is performed taking into account acoustic, non-polar and polar optical phonon scattering, scattering by ionised impurities and space charge scattering. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated. The temperature dependence of the Hall coefficient is explained in the limit of a two acceptor–one donor model. The value of the activation energy of the deep acceptors, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors were estimated. References 1 H. Lange, phys. stat. sol. (b) 201, 3 (1997). 2 E. Arushanov, Ch. Kloc, H. Hohl, and E. Bucher, J. Appl. Phys. 75, 5106 (1994). 3 G. Behr, J. Werner, G. Weise, A. Heinrich, A. Burkov, and C. Gladun, phys. stat. sol. (a) 160, 549 (1997). 4 E. Arushanov, H. 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Publication Year: 1998
Publication Date: 1998-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 18
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