Title: Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H–SiC and Si
Abstract: Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H–SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron–electron, hole–hole, electron–hole, electron–optical phonon and hole–optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.
Publication Year: 2000
Publication Date: 2000-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 19
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