Title: Anomalous stress in thermal oxide of polycrystalline Si
Abstract: The thermal oxide of polycrystalline Si (poly-Si oxide) is found to be under a compressive stress two or more times larger than the stress in the thermal oxide of single-crystalline Si (single-Si oxide). The stress in poly-Si oxide depends largely on poly-Si growth temperature, oxidation temperature, and oxide thickness, especially for oxides less than 200 nm thick. The surface valleys formed at poly-Si grain boundaries relate to this phenomena. The behavior of stress variations with oxide thickness is not substantially affected by oxidation temperature. The temperature dependence (room temperature to 800 °C) of stress in poly-Si oxide is similar to that in single-Si oxide. Consequently, the large stress generation in poly-Si oxide is not due to oxide characteristics but to poly-Si surface morphological conditions.
Publication Year: 1980
Publication Date: 1980-06-15
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 8
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot