Abstract: physica status solidi (a)Volume 122, Issue 1 p. 347-354 Original Paper Electron Trap Activation in Thermal SiO2 V. K. Adamchuk, V. K. Adamchuk Institute of Physics, Leningrad State University Search for more papers by this authorV. V. Afanasev, V. V. Afanasev Institute of Physics, Leningrad State University Search for more papers by this authorA. V. Akulov, A. V. Akulov Institute of Physics, Leningrad State University Search for more papers by this author V. K. Adamchuk, V. K. Adamchuk Institute of Physics, Leningrad State University Search for more papers by this authorV. V. Afanasev, V. V. Afanasev Institute of Physics, Leningrad State University Search for more papers by this authorA. V. Akulov, A. V. Akulov Institute of Physics, Leningrad State University Search for more papers by this author First published: 16 November 1990 https://doi.org/10.1002/pssa.2211220133Citations: 12 Ulyanovskaya 1, SU-198904 Leningrad, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstracten The charge accumulation in oxide of silicon MOS-structures is studied under monopolar injection and electron–hole injection cycling. The hole injection is found to result in new electron trap generation with cross section (4 ± 1) × 10−15 cm2. The effect observed is due to the precursor state activation in the bulk of oxide. Annealing experiments reveal the irreversible precursor reconstruction under hole capture and the thermal stability of activated traps up to 500 °C. The results of the activation effect study after neutron and proton bombardment and under chlorine incorporation are also presented. Strained bonds, e.g. SiO, are considered as possible precursor centers. The activation effect reported seems to be the first stage of oxide degradation under ionization. In view of trap thermal stability the activation can be responsible for the gate oxide degradation under lithography with electron beams, synchrotron radiation, or X-rays and under other radiation technologies used. Abstractru [Russian Text Ignored]. References 1 F. P. Korshunov, U. V. Bogatyrev, and V. A. Vavilov, The Radiation Effect on Integrated Circuits, Nauka i Tekhnika, Minsk, 1986 (p. 352) (in Russian). Google Scholar 2 M. Koyanagi, A. G. Lewis, J. Zhu, R. A. Martin, T. Y. Huang, and J. V. Chen, IEDM Techn. Dig. 722 (1986). 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Publication Year: 1990
Publication Date: 1990-11-16
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 14
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