Title: Asymmetric gate oxide Tunnel Field Effect Transistor for improved circuit performance
Abstract: This work presents the performance evaluation of an asymmetric gate oxide Double Gate Tunnel Field Effect Transistor (DG-TFET) based on the concept of Heterogeneous Dielectric with a high-k material at the source side and low-k at the drain end. But, in order to improve the performance further, the low-k oxide material (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) at the drain end is replaced with air (k=1) to alleviate the problem of high gate drain capacitance, thus providing improved cut-off frequency, circuit performance in terms of inverter propagation delay and suppressed ambipolar behavior.
Publication Year: 2012
Publication Date: 2012-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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