Title: A new analytical and statistical-oriented approach for the two-dimensional threshold analysis of short-channel MOSFETs
Abstract: An approximate analytical solution of Poisson's equation for the short-channel MOSFET operating in the subthreshold regime is presented. The analysis, developed by using the weighted-residual method, enables us to achieve a surface potential distribution along the channel of the device very close to that obtained with two-dimensional numerical simulation. It predicts a dependence of the threshold voltage on channel length, oxide thickness, substrate doping, junction depth and drain and substrate voltages in very good agreement with 2-D analysis and with available experimental data. Also the methods of this work, which yield a gain, for threshold predictions, of a factor of about 103 in CPU time with respect to numerical modeling, seems particularly suited for statistical modeling. Finally, as an example, probability distributions of the threshold voltage in short-channel MOSFETs induced from a gaussian distribution of device and process parameters are presented.
Publication Year: 1989
Publication Date: 1989-09-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
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