Abstract: Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, ZrO₂,CeO₂, and MnO₂ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.
Publication Year: 2006
Publication Date: 2006-07-01
Language: en
Type: article
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