Title: The Influence of H<sub>2</sub>Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition
Abstract: Plasma Processes and PolymersVolume 12, Issue 7 p. 624-641 Full Paper The Influence of H2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition Peter De Schepper, Corresponding Author Peter De Schepper Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorZiad el Otell, Ziad el Otell Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorAlessandro Vaglio Pret, Alessandro Vaglio Pret KLA-Tencor Corp., ICOS/PSG, Research Park Haasrode 1112, Esperantolaan 8, 3001 Leuven, BelgiumSearch for more papers by this authorEfrain Altamirano-Sanchez, Efrain Altamirano-Sanchez Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorStefan De Gendt, Stefan De Gendt Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this author Peter De Schepper, Corresponding Author Peter De Schepper Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorZiad el Otell, Ziad el Otell Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorAlessandro Vaglio Pret, Alessandro Vaglio Pret KLA-Tencor Corp., ICOS/PSG, Research Park Haasrode 1112, Esperantolaan 8, 3001 Leuven, BelgiumSearch for more papers by this authorEfrain Altamirano-Sanchez, Efrain Altamirano-Sanchez Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorStefan De Gendt, Stefan De Gendt Department of Chemistry, Katholieke Universiteit Leuven (KULeuven), Kapeldreef, 3001 Leuven, Belgium Department of Unit Process and Modules, IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this author First published: 19 January 2015 https://doi.org/10.1002/ppap.201400157Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract To meet the demands for sub-20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra-large scale integrated circuit manufacturing. Post-lithography treatments should reduce the LWR by at least 50% to meet the technology requirements, but the available post-lithography strategies come short. To support the delayed progress, an in depth understanding of the interaction of such post-lithography treatments with EUV-specific resist functionalities is required. In this article, we analyze the change in line widths and LWR's for 30–35 nm lines using EUV photoresists. In addition we study the effect of the chemical composition on the reduction of LWR after hydrogen plasma treatment using "artificially" prepared reference resists. 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Publication Year: 2015
Publication Date: 2015-01-19
Language: en
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