Title: High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation
Abstract:We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen annealing to form ideal Ge/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.or...We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen annealing to form ideal Ge/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stacks based on thermodynamic and kinetic control. The capacitance-voltage (C-V) characteristics of Ge/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> MISCAPs with two-step oxidation revealed significant improvements of electrical properties, and the interface states density (Dit) estimated with a low-temperature conductance method that was below 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> near the midgap. On the basis of our understanding of Ge oxidation, we demonstrated very high electron mobility in Ge n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that exceeded the universal mobility in Si-MOSFETs. The peak electron mobility in Ge n-MOSFETs with the two-step oxidation was 1100 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s in the Al/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ge stack. This was achieved by taking care of the Ge/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> channel interface. Since we clarified that mobility was still limited by the remaining extrinsic scattering sources, the present results promise much higher performance Ge complementary metal-oxide-semiconductor.Read More
Publication Year: 2011
Publication Date: 2011-03-15
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 121
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot