Title: Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology
Abstract: DC and HF performance for a 70 nm InP PHEMT technology have been studied as a function of gate-to-channel distance. The optimized PHEMT exhibited a maximum transconductance of 1.5 S/mm and f/sub max/ of 400 GHz.
Publication Year: 2005
Publication Date: 2005-10-24
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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