Title: Ohmic Contact To Amorphous Carbon Thin Films
Abstract: Amorphous carbon (a‐C) thin films have been deposited on silicon substrates at different deposition temperatures ranging from 700° C–800° C. The objective of this work is to investigate several electrical contacts on a‐C thin films and to find the suitable method to fabricate ohmic contact on a‐C thin films that prepared from a natural product, camphor (C10H16O). The a‐C thin films were prepared with a simple thermal CVD method. In this study, Aurum (Au) and Platinum (Pt) were selected as the metal contact to a‐C thin films. I‐V characteristics measurement was carried out to study the contact between metal and a‐C thin films. It was found that increasing deposition temperature also contributes to the variation I‐V characteristics of a‐C thin films.
Publication Year: 2009
Publication Date: 2009-01-01
Language: en
Type: article
Indexed In: ['crossref']
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