Title: One-dimensional Sub-threshold Channels In Nanoscale Triple-gate Silicon Transistors
Abstract: We experimentally show the formation of sub‐threshold channels at the edges of triple‐gate silicon field‐effect transistors, called FinFETs. These three dimensional nano‐scale devices consist of a lithographically defined Si nanowire surrounded by a gate and have an active region as small as 50×60×35 nm3. By measuring the thermally activated transport, the sub‐threshold channels are determined to have a cross‐section of only 4 nm2. The presence and size of these sub‐threshold channels is independently confirmed by the Coulomb blockade conductance peaks visible below 60 K. These features reveal the formation of a quantum dot in the channel with a charging energy consistent with a 2 nm wide channel that extends from source to drain.
Publication Year: 2007
Publication Date: 2007-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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