Title: Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.9 O 9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering
Abstract:Ferroelectric Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films on a Pt/SiO2/Si substrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical propert...Ferroelectric Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films on a Pt/SiO2/Si substrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical properties were investigated. The films crystallized with high (115) diffraction intensity at a substrate temperature of 600 °C, and showed columnar microstructure. The 600 °C sputtered films with a thickness of 440 nm exhibited remanent polarization (2Pr) of 52 μC/cm2 and coercive field (2Ec) 28 kV/cm at an applied voltage of 1.5 V. The leakage current density was about 6×10−6 A/cm2 at an electric field of 50 kV/cm. The films demonstrated fatigue free characteristics up to 1.0×1010 switching cycles under a 3 V bipolar 1 MHz square wave.Read More
Publication Year: 1998
Publication Date: 1998-04-06
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 50
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